Example memory module SPD data

Top  Previous  Next

Detailed Memory module SPD data is available in a level 2 activity trace log file. This includes information such as the memory module timings. An example extract from a level 2 activity trace file is shown below:

 

Memory

Total Physical Memory: 2047MB

Available Physical Memory: 623MB

Memory devices:

  Slot 1:

  - 1GB DDR2 SDRAM PC2-6400

  - Corsair CM2X1024-6400

  - SSTL 1.8V, Clk: 400.0MHz, Timings 5-5-5-18 (@ Max. freq.)

  Slot 2:

  - Not populated

  Slot 3:

  - 1GB DDR2 SDRAM PC2-6400

  - Corsair CM2X1024-6400

  - SSTL 1.8V, Clk: 400.0MHz, Timings 5-5-5-18 (@ Max. freq.)

  Slot 4:

  - Not populated

 

Memory SPD:

DIMM#0

Memory type: DDR2 SDRAM

SPD revision: 1.2

Manufacturer: Corsair

Manufacturing date: Year: 0, Week: 0

Serial number: 00000000

Part number: CM2X1024-6400    

Clock speed: 400.0 MHz

Memory size: 1024 MB

Number of banks: 8

Row address bits: 14

Column address bits: 10

Bus width: 64 bits

Device width: 8 bits

Number of ranks: 1

ECC: No

Module voltage: SSTL 1.8V

Minimum clock cycle time (tCK): 2.500 ns

Supported CAS latencies: 4 5

Minimum CAS latency time (tAA): 12.500 ns

Minimum RAS to CAS delay time (tRCD): 12.500 ns

Minimum row precharge time (tRP): 12.500 ns

Minimum active to precharge time (tRAS): 45.000 ns

Supported timing at highest clock speed: 5-5-5-18

Minimum Row Active to Row Active Delay (tRRD): 7.500 ns

Minimum Active to Auto-Refresh Delay (tRC): 55.000 ns

Minimum Recovery Delay (tRFC): 105.000 ns

Data access time from clock (tAC): 0.400 ns

Minimum Write Recovery time (tWR): 15.000 ns

Minimum Write to Read CMD Delay (tWTR): 7.500 ns

Minimum Read to Pre-charge CMD Delay (tRTP): 7.500 ns

Address/Command Setup Time Before Clock (tIS): 0.180 ns

Address/Command Hold Time After Clock (tIH): 0.250 ns

Data Input Setup Time Before Strobe (tDS): 0.050 ns

Data Input Hold Time After Strobe (tDH): 0.130 ns

Maximum DQS to DQ Skew (tDQSQ): 0.200 ns

Maximum Read Data Hold Skew (tQHS): 0.240 ns

Supported Burst Lengths: 4 8

Refresh Rate: Reduced (7.8us)

Supports Partial Array Self-Refresh: No

Module Height: 30.0 mm

 

DIMM#2

Memory type: DDR2 SDRAM

SPD revision: 1.2

Manufacturer: Corsair

Manufacturing date: Year: 0, Week: 0

Serial number: 00000000

Part number: CM2X1024-6400    

Clock speed: 400.0 MHz

Memory size: 1024 MB

Number of banks: 8

Row address bits: 14

Column address bits: 10

Bus width: 64 bits

Device width: 8 bits

Number of ranks: 1

ECC: No

Module voltage: SSTL 1.8V

Minimum clock cycle time (tCK): 2.500 ns

Supported CAS latencies: 4 5

Minimum CAS latency time (tAA): 12.500 ns

Minimum RAS to CAS delay time (tRCD): 12.500 ns

Minimum row precharge time (tRP): 12.500 ns

Minimum active to precharge time (tRAS): 45.000 ns

Supported timing at highest clock speed: 5-5-5-18

Minimum Row Active to Row Active Delay (tRRD): 7.500 ns

Minimum Active to Auto-Refresh Delay (tRC): 55.000 ns

Minimum Recovery Delay (tRFC): 105.000 ns

Data access time from clock (tAC): 0.400 ns

Minimum Write Recovery time (tWR): 15.000 ns

Minimum Write to Read CMD Delay (tWTR): 7.500 ns

Minimum Read to Pre-charge CMD Delay (tRTP): 7.500 ns

Address/Command Setup Time Before Clock (tIS): 0.180 ns

Address/Command Hold Time After Clock (tIH): 0.250 ns

Data Input Setup Time Before Strobe (tDS): 0.050 ns

Data Input Hold Time After Strobe (tDH): 0.130 ns

Maximum DQS to DQ Skew (tDQSQ): 0.200 ns

Maximum Read Data Hold Skew (tQHS): 0.240 ns

Supported Burst Lengths: 4 8

Refresh Rate: Reduced (7.8us)

Supports Partial Array Self-Refresh: No

Module Height: 30.0 mm